Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 35 A, 60 V Enhancement, 8-Pin PDFN56

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Subtotal (1 reel of 2500 units)*

Kr.21 565 00 

(exc. VAT)

Kr.26 955 00 

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +Kr. 8,626Kr. 21 565,00

*price indicative

RS Stock No.:
216-9701
Mfr. Part No.:
TSM220NB06CR
Brand:
Taiwan Semiconductor
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Brand

Taiwan Semiconductor

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

60V

Series

TSM025

Package Type

PDFN56

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

68W

Typical Gate Charge Qg @ Vgs

23nC

Maximum Operating Temperature

175°C

Length

6.2mm

Width

4.2 mm

Height

1.1mm

Standards/Approvals

WEEE 2002/96/EC, RoHS 2011/65/EU, IEC 61249-2-21

Automotive Standard

No

The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested

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