Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 35 A, 60 V Enhancement, 8-Pin PDFN56 TSM220NB06CR

View all MOSFETs

Subtotal (1 pack of 25 units)*

Kr.248 10 

(exc. VAT)

Kr.310 125 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 5 000 unit(s) shipping from 19. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
25 +Kr. 9,924Kr. 248,10

*price indicative

Packaging Options:
RS Stock No.:
216-9702
Mfr. Part No.:
TSM220NB06CR
Brand:
Taiwan Semiconductor
Find similar products by selecting one or more attributes.
Select all

Brand

Taiwan Semiconductor

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

60V

Package Type

PDFN56

Series

TSM025

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

23nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

68W

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

WEEE 2002/96/EC, RoHS 2011/65/EU, IEC 61249-2-21

Length

6.2mm

Height

1.1mm

Width

4.2 mm

Automotive Standard

No

The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested

Related links