Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 28 A, 60 V Enhancement, 8-Pin PDFN56

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Subtotal (1 reel of 2500 units)*

Kr.12 417 50 

(exc. VAT)

Kr.15 522 50 

(inc. VAT)

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Per Reel*
2500 +Kr. 4,967Kr. 12 417,50

*price indicative

RS Stock No.:
216-9708
Mfr. Part No.:
TSM280NB06LCR
Brand:
Taiwan Semiconductor
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Brand

Taiwan Semiconductor

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

28A

Maximum Drain Source Voltage Vds

60V

Package Type

PDFN56

Series

TSM025

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

28mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

18nC

Maximum Power Dissipation Pd

56W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

IEC 61249-2-21, RoHS 2011/65/EU, WEEE 2002/96/EC

Height

1.1mm

Width

5.1 mm

Length

6.1mm

Automotive Standard

No

The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested

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