Infineon CoolMOS Type N-Channel MOSFET, 70 A, 100 V Enhancement, 3-Pin TO-263 IPB70N10S312ATMA1

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Subtotal (1 pack of 10 units)*

Kr. 194,39

(exc. VAT)

Kr. 242,99

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 40Kr. 19,439Kr. 194,39
50 - 90Kr. 18,467Kr. 184,67
100 - 240Kr. 17,689Kr. 176,89
250 - 490Kr. 16,912Kr. 169,12
500 +Kr. 15,746Kr. 157,46

*price indicative

Packaging Options:
RS Stock No.:
217-2508
Mfr. Part No.:
IPB70N10S312ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

70A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

CoolMOS

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

11.3mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

129W

Typical Gate Charge Qg @ Vgs

51nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

10.31mm

Height

4.57mm

Automotive Standard

AEC-Q101

The Infineon 100V, N-Ch, 11.3 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T.

N-channel - Enhancement mode

Automotive AEC Q101 qualified

MSL1 up to 260°C peak reflow

175°C operating temperature

Green product (RoHS compliant)

100% Avalanche tested

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