Infineon CoolMOS N-Channel MOSFET, 70 A, 100 V Enhancement, 3-Pin TO-263 IPB70N10S312ATMA1

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Subtotal (1 pack of 10 units)*

Kr. 214,16

(exc. VAT)

Kr. 267,70

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 40Kr. 21,416Kr. 214,16
50 - 90Kr. 20,345Kr. 203,45
100 - 240Kr. 19,489Kr. 194,89
250 - 490Kr. 18,632Kr. 186,32
500 +Kr. 17,347Kr. 173,47

*price indicative

Packaging Options:
RS Stock No.:
217-2508
Mfr. Part No.:
IPB70N10S312ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

70A

Maximum Drain Source Voltage Vds

100V

Series

CoolMOS

Package Type

TO-263

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

11.3mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

129W

Forward Voltage Vf

900mV

Typical Gate Charge Qg @ Vgs

51nC

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

10.31mm

Height

4.57mm

Width

9.45mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon 100V, N-Ch, 11.3 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T.

N-channel - Enhancement mode

Automotive AEC Q101 qualified

MSL1 up to 260°C peak reflow

175°C operating temperature

Green product (RoHS compliant)

100% Avalanche tested

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