Infineon CoolMOS Type N-Channel MOSFET, 31.2 A, 650 V Enhancement, 3-Pin TO-263 IPB65R190C7ATMA2

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Subtotal (1 pack of 5 units)*

Kr.110 76 

(exc. VAT)

Kr.138 45 

(inc. VAT)

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Temporarily out of stock
  • 1 285 unit(s) shipping from 29. desember 2025
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Units
Per unit
Per Pack*
5 - 20Kr. 22,152Kr. 110,76
25 - 45Kr. 18,602Kr. 93,01
50 - 120Kr. 17,48Kr. 87,40
125 - 245Kr. 16,20Kr. 81,00
250 +Kr. 15,056Kr. 75,28

*price indicative

Packaging Options:
RS Stock No.:
222-4658
Mfr. Part No.:
IPB65R190C7ATMA2
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

31.2A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-263

Series

CoolMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

110mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon design of Cool MOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².

AEC Q101 qualified

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