Infineon CoolMOS Type N-Channel MOSFET, 31.2 A, 650 V Enhancement, 3-Pin TO-263 IPB65R190C7ATMA2
- RS Stock No.:
- 222-4658
- Mfr. Part No.:
- IPB65R190C7ATMA2
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
Kr. 164,62
(exc. VAT)
Kr. 205,775
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Temporarily out of stock
- 1 285 unit(s) shipping from 01 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | Kr. 32,924 | Kr. 164,62 |
| 25 - 45 | Kr. 27,64 | Kr. 138,20 |
| 50 - 120 | Kr. 25,992 | Kr. 129,96 |
| 125 - 245 | Kr. 24,07 | Kr. 120,35 |
| 250 + | Kr. 22,40 | Kr. 112,00 |
*price indicative
- RS Stock No.:
- 222-4658
- Mfr. Part No.:
- IPB65R190C7ATMA2
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 31.2A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 110mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 31.2A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 110mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon design of Cool MOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².
AEC Q101 qualified
Related links
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