Infineon CoolMOS Type N-Channel MOSFET, 31.2 A, 650 V Enhancement, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

Kr.3 287 40 

(exc. VAT)

Kr.4 109 25 

(inc. VAT)

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Units
Per unit
Per Tube*
50 - 50Kr. 65,748Kr. 3 287,40
100 - 100Kr. 62,46Kr. 3 123,00
150 +Kr. 58,516Kr. 2 925,80

*price indicative

RS Stock No.:
222-4706
Mfr. Part No.:
IPP65R110CFDAAKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

31.2A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS

Package Type

TO-220

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

110mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

110nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

277.8W

Maximum Operating Temperature

150°C

Length

10.36mm

Width

15.95 mm

Standards/Approvals

No

Height

4.57mm

Automotive Standard

AEC-Q101

The Infineon MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Pb-free lead plating; RoHS compliant

Superior thermal resistance 100% avalanche tested

Halogen-free according to IEC61249-2-23

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