Infineon CoolMOS N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin TO-220 IPP60R099C7XKSA1

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Subtotal (1 pack of 2 units)*

Kr. 158,33

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Kr. 197,91

(inc. VAT)

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2 - 18Kr. 79,165Kr. 158,33-
20 - 48Kr. 75,16Kr. 150,32Kr. 80,10
50 - 98Kr. 68,755Kr. 137,51Kr. 520,50
100 - 198Kr. 59,43Kr. 118,86Kr. 1 973,50
200 +Kr. 54,91Kr. 109,82Kr. 4 851,00

*price indicative

Packaging Options:
RS Stock No.:
222-4700
Mfr. Part No.:
IPP60R099C7XKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

22A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-220

Series

CoolMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

99mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

42nC

Maximum Power Dissipation Pd

110W

Forward Voltage Vf

900mV

Minimum Operating Temperature

-55°C

Length

10.36mm

Standards/Approvals

No

Height

4.57mm

Width

15.95mm

Automotive Standard

No

The Infineon MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Pb-free lead plating; RoHS compliant

Superior thermal resistance 100% avalanche tested

Halogen-free according to IEC61249-2-23

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