Infineon CoolMOS Type N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin TO-220 IPP60R099C7XKSA1

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Subtotal (1 pack of 2 units)*

Kr.116 42 

(exc. VAT)

Kr.145 52 

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 18Kr. 58,21Kr. 116,42
20 - 48Kr. 55,37Kr. 110,74
50 - 98Kr. 50,68Kr. 101,36
100 - 198Kr. 43,70Kr. 87,40
200 +Kr. 40,325Kr. 80,65

*price indicative

Packaging Options:
RS Stock No.:
222-4700
Mfr. Part No.:
IPP60R099C7XKSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

22A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS

Package Type

TO-220

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

99mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

110W

Typical Gate Charge Qg @ Vgs

42nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.9V

Width

15.95 mm

Standards/Approvals

No

Height

4.57mm

Length

10.36mm

Automotive Standard

No

The Infineon MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Pb-free lead plating; RoHS compliant

Superior thermal resistance 100% avalanche tested

Halogen-free according to IEC61249-2-23

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