Infineon CoolMOS N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin TO-220 IPP60R099C7XKSA1

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Subtotal (1 tube of 50 units)*

Kr. 2 593,00

(exc. VAT)

Kr. 3 241,00

(inc. VAT)

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Units
Per unit
Per Tube*
50 - 50Kr. 51,86Kr. 2 593,00
100 - 200Kr. 49,268Kr. 2 463,40
250 +Kr. 46,154Kr. 2 307,70

*price indicative

RS Stock No.:
222-4699
Mfr. Part No.:
IPP60R099C7XKSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

22A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-220

Series

CoolMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

99mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

42nC

Forward Voltage Vf

900mV

Maximum Power Dissipation Pd

110W

Width

15.95mm

Standards/Approvals

No

Height

4.57mm

Length

10.36mm

Automotive Standard

No

The Infineon MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Pb-free lead plating; RoHS compliant

Superior thermal resistance 100% avalanche tested

Halogen-free according to IEC61249-2-23

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