Infineon CoolMOS P7 Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-247

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Subtotal (1 tube of 30 units)*

Kr.1 186 32 

(exc. VAT)

Kr.1 482 90 

(inc. VAT)

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  • Plus 1 020 unit(s) shipping from 29. desember 2025
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Units
Per unit
Per Tube*
30 - 30Kr. 39,544Kr. 1 186,32
60 - 120Kr. 37,569Kr. 1 127,07
150 +Kr. 35,986Kr. 1 079,58

*price indicative

RS Stock No.:
217-2586
Mfr. Part No.:
IPW60R120P7XKSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-247

Series

CoolMOS P7

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

120mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

95W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

36nC

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.13mm

Height

41.42mm

Width

5.21 mm

Automotive Standard

No

The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

ESD ruggedness of ≥ 2kV (HBM class 2)

Integrated gate resistor R G

Rugged body diode

Wide portfolio in through hole and surface mount packages

Both standard grade and industrial grade parts are available

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