Infineon CoolMOS P7 Type N-Channel MOSFET, 206 A, 650 V Enhancement, 3-Pin TO-247 IPW60R045P7XKSA1

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Kr.76 88 

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Kr.96 10 

(inc. VAT)

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1 - 9Kr. 76,88
10 - 24Kr. 69,90
25 - 49Kr. 65,32
50 - 99Kr. 60,86
100 +Kr. 56,17

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Packaging Options:
RS Stock No.:
219-6023
Mfr. Part No.:
IPW60R045P7XKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

206A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS P7

Package Type

TO-247

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

45mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

90nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

201W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

21.1 mm

Height

5.21mm

Length

16.13mm

Automotive Standard

No

The Infineon 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.

ESD ruggedness of ≥ 2kV (HBM class 2)

Integrated gate resistor RG

Rugged body diode

Wide portfolio in through hole and surface mount packages

Both standard grade and industrial grade parts are available

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