Infineon CoolMOS P7 Type N-Channel MOSFET, 18 A, 600 V Enhancement, 4-Pin TO-247

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Subtotal (1 tube of 30 units)*

Kr.892 65 

(exc. VAT)

Kr.1 115 82 

(inc. VAT)

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  • Plus 210 unit(s) shipping from 29. desember 2025
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Units
Per unit
Per Tube*
30 - 30Kr. 29,755Kr. 892,65
60 - 120Kr. 28,268Kr. 848,04
150 +Kr. 27,078Kr. 812,34

*price indicative

RS Stock No.:
217-2592
Mfr. Part No.:
IPZA60R180P7XKSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

600V

Series

CoolMOS P7

Package Type

TO-247

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

180mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

72W

Typical Gate Charge Qg @ Vgs

25nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Length

15.9mm

Standards/Approvals

No

Height

41.2mm

Width

5.1 mm

Automotive Standard

No

The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

600V P7 enables excellent FOM R DS(on)xE oss DS(on)xQ G

ESD ruggedness of ≥ 2kV (HBM class 2)

Integrated gate resistor R G

Rugged body diode

Wide portfolio in through hole and surface mount packages

Both standard grade and industrial grade parts are available

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