Infineon CoolMOS P7 Type N-Channel MOSFET, 18 A, 600 V Enhancement, 4-Pin TO-247 IPZA60R180P7XKSA1

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Subtotal (1 pack of 5 units)*

Kr.172 98 

(exc. VAT)

Kr.216 225 

(inc. VAT)

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Per unit
Per Pack*
5 +Kr. 34,596Kr. 172,98

*price indicative

Packaging Options:
RS Stock No.:
217-2593
Mfr. Part No.:
IPZA60R180P7XKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-247

Series

CoolMOS P7

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

180mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

25nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

72W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Height

41.2mm

Standards/Approvals

No

Length

15.9mm

Width

5.1 mm

Automotive Standard

No

The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

600V P7 enables excellent FOM R DS(on)xE oss DS(on)xQ G

ESD ruggedness of ≥ 2kV (HBM class 2)

Integrated gate resistor R G

Rugged body diode

Wide portfolio in through hole and surface mount packages

Both standard grade and industrial grade parts are available

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