Infineon HEXFET Type N-Channel MOSFET, 34 A, 200 V Enhancement, 8-Pin SuperSO

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Subtotal (1 reel of 4000 units)*

Kr.39 988 00 

(exc. VAT)

Kr.49 984 00 

(inc. VAT)

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Units
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Per Reel*
4000 +Kr. 9,997Kr. 39 988,00

*price indicative

RS Stock No.:
217-2608
Mfr. Part No.:
IRFH5020TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

34A

Maximum Drain Source Voltage Vds

200V

Package Type

SuperSO

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

55mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

34nC

Maximum Power Dissipation Pd

3.6W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

5mm

Width

6 mm

Height

0.9mm

Automotive Standard

No

The Infineon 200V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Normal level : Optimized for 10 V gate drive voltage

Industry standard surface-mount power package

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