Infineon HEXFET Type N-Channel MOSFET, 34 A, 200 V Enhancement, 8-Pin SuperSO IRFH5020TRPBF

View all MOSFETs

Subtotal (1 pack of 10 units)*

Kr.101 13 

(exc. VAT)

Kr.126 41 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 6 790 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
10 +Kr. 10,113Kr. 101,13

*price indicative

Packaging Options:
RS Stock No.:
217-2609
Mfr. Part No.:
IRFH5020TRPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

34A

Maximum Drain Source Voltage Vds

200V

Series

HEXFET

Package Type

SuperSO

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

55mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

3.6W

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

34nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Height

0.9mm

Width

6 mm

Length

5mm

Automotive Standard

No

The Infineon 200V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Normal level : Optimized for 10 V gate drive voltage

Industry standard surface-mount power package

Related links