Infineon HEXFET Type N-Channel MOSFET, 86 A, 30 V Enhancement, 3-Pin TO-252 IRFR3709ZTRPBF

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Subtotal (1 pack of 25 units)*

Kr. 182,00

(exc. VAT)

Kr. 227,50

(inc. VAT)

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Units
Per unit
Per Pack*
25 - 100Kr. 7,28Kr. 182,00
125 - 225Kr. 6,919Kr. 172,98
250 - 600Kr. 6,626Kr. 165,65
625 - 1225Kr. 6,338Kr. 158,45
1250 +Kr. 5,898Kr. 147,45

*price indicative

Packaging Options:
RS Stock No.:
217-2622
Mfr. Part No.:
IRFR3709ZTRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

86A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

8.2mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

79W

Typical Gate Charge Qg @ Vgs

17nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Height

2.39mm

Width

6.22 mm

Standards/Approvals

No

Length

6.37mm

Automotive Standard

No

The Infineon 30V Single N-Channel HEXFET Power MOSFET in a D-Pak package.

Very Low RDS(on) at 4.5V VGS

Ultra-Low Gate Impedance

Fully Characterized Avalanche Voltage

and Current

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