Infineon HEXFET Type N-Channel MOSFET, 86 A, 30 V Enhancement, 3-Pin TO-252 IRFR3709ZTRPBF

Currently unavailable
Sorry, we don't know when this will be back in stock.
Packaging Options:
RS Stock No.:
217-2622
Mfr. Part No.:
IRFR3709ZTRPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

86A

Maximum Drain Source Voltage Vds

30V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

8.2mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

79W

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

17nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Width

6.22 mm

Height

2.39mm

Standards/Approvals

No

Length

6.37mm

Automotive Standard

No

The Infineon 30V Single N-Channel HEXFET Power MOSFET in a D-Pak package.

Very Low RDS(on) at 4.5V VGS

Ultra-Low Gate Impedance

Fully Characterized Avalanche Voltage

and Current

Related links