Infineon HEXFET Type N-Channel MOSFET & Diode, 86 A, 30 V Enhancement, 3-Pin TO-252 IRFR3709ZTRLPBF

RS Stock No.:: 220-7496
Mfr. Part No.:: IRFR3709ZTRLPBF
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET & Diode, 86 A, 30 V Enhancement, 3-Pin TO-252 IRFR3709ZTRLPBF

Bulk discount available

Subtotal (1 pack of 20 units)*

Kr.178 70

(exc. VAT)

Kr.223 38

(inc. VAT)

FREE delivery for online orders over 500,00 kr

Temporarily out of stock

1 160 unit(s) shipping from 29. desember 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
20 - 80	Kr. 8,935	Kr. 178,70
100 - 180	Kr. 8,483	Kr. 169,66
200 - 480	Kr. 8,128	Kr. 162,56
500 - 980	Kr. 7,768	Kr. 155,36
1000 +	Kr. 7,242	Kr. 144,84

*price indicative

RS Stock No.:: 220-7496
Mfr. Part No.:: IRFR3709ZTRLPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET & Diode
	Channel Type	Type N
	Maximum Continuous Drain Current Id	86A
	Maximum Drain Source Voltage Vds	30V
	Package Type	TO-252
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	6.5mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	79W
	Forward Voltage Vf	1V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	26nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Length	6.73mm
	Height	6.22mm
	Width	2.39 mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET & Diode
	Channel Type Type N
	Maximum Continuous Drain Current Id 86A
	Maximum Drain Source Voltage Vds 30V
	Package Type TO-252
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 6.5mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 79W
	Forward Voltage Vf 1V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 26nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Length 6.73mm
	Height 6.22mm
	Width 2.39 mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IRFR3709ZTRLPBF

The Infineon's OptiMOS N-channel power MOSFETs are developed to increase efficiency, power density and cost-effectiveness. Designed for high performance applications and optimized for high switching frequency, OptiMOS products convince with the industry's best figure of merit. The OptiMOS power MOSFET portfolio, now complemented by Strong IRFET, creates a truly powerful combination. Benefit from a perfect match of robust and excellent price/performance of Strong IRFET MOSFETs and best-in-class technology of OptiMOS MOSFETs. Both product families answer to the highest quality standards and performance demands. The joint portfolio, covering voltages from 12V up to 300V MOSFETs, can address a broad range of needs from low to high switching frequencies such as SMPS, battery powered applications, motor control and drives, inverters, and computing.

Industry-leading quality

Low RDS(ON) at 4.5V VGS

Fully Characterized Avalanche Voltage and Current

Ultra-Low Gate Impedance

Infineon HEXFET Type N-Channel MOSFET & Diode, 86 A, 30 V Enhancement, 3-Pin TO-252 IRFR3709ZTRLPBF

FREE delivery for online orders over 500,00 kr

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