Infineon HEXFET Type N-Channel MOSFET, 45 A, 250 V TO-263
- RS Stock No.:
- 217-2633
- Mfr. Part No.:
- IRFS4229TRLPBF
- Brand:
- Infineon
Subtotal (1 reel of 800 units)*
Kr.14 026 40
(exc. VAT)
Kr.17 532 80
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 2 400 unit(s) shipping from 19. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 800 + | Kr. 17,533 | Kr. 14 026,40 |
*price indicative
- RS Stock No.:
- 217-2633
- Mfr. Part No.:
- IRFS4229TRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 48mΩ | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 330W | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.83 mm | |
| Length | 10.67mm | |
| Height | 9.65mm | |
| Standards/Approvals | EIA 418 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 250V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 48mΩ | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 330W | ||
Maximum Operating Temperature 175°C | ||
Width 4.83 mm | ||
Length 10.67mm | ||
Height 9.65mm | ||
Standards/Approvals EIA 418 | ||
Automotive Standard No | ||
The Infineon HEXFET® Power MOSFET is specifically designed for Sustain ; Energy Recovery & Pass switch applications in plasma Display panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low E pulse rating.
Advanced Process Technology
Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
Low QG for Fast Response
High Repetitive Peak Current Capability for Reliable Operation
Short Fall & Rise Times for Fast Switching
175°C Operating Junction Temperature for Improved Ruggedness
Repetitive Avalanche Capability for Robustness and Reliability
Related links
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