Infineon HEXFET Type N-Channel MOSFET, 45 A, 250 V TO-263 IRFS4229TRLPBF
- RS Stock No.:
- 217-2634
- Mfr. Part No.:
- IRFS4229TRLPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.177 60
(exc. VAT)
Kr.222 00
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 2 610 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | Kr. 35,52 | Kr. 177,60 |
| 25 - 45 | Kr. 31,264 | Kr. 156,32 |
| 50 - 120 | Kr. 29,488 | Kr. 147,44 |
| 125 - 245 | Kr. 27,364 | Kr. 136,82 |
| 250 + | Kr. 25,222 | Kr. 126,11 |
*price indicative
- RS Stock No.:
- 217-2634
- Mfr. Part No.:
- IRFS4229TRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 48mΩ | |
| Maximum Power Dissipation Pd | 330W | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Width | 4.83 mm | |
| Height | 9.65mm | |
| Standards/Approvals | EIA 418 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 48mΩ | ||
Maximum Power Dissipation Pd 330W | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Width 4.83 mm | ||
Height 9.65mm | ||
Standards/Approvals EIA 418 | ||
Automotive Standard No | ||
The Infineon HEXFET® Power MOSFET is specifically designed for Sustain ; Energy Recovery & Pass switch applications in plasma Display panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low E pulse rating.
Advanced Process Technology
Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
Low QG for Fast Response
High Repetitive Peak Current Capability for Reliable Operation
Short Fall & Rise Times for Fast Switching
175°C Operating Junction Temperature for Improved Ruggedness
Repetitive Avalanche Capability for Robustness and Reliability
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