Infineon HEXFET Type N-Channel MOSFET, 89 A, 55 V TO-263

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Bulk discount available

Subtotal (1 reel of 800 units)*

Kr.8 620 00 

(exc. VAT)

Kr.10 775 20 

(inc. VAT)

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Units
Per unit
Per Reel*
800 - 800Kr. 10,775Kr. 8 620,00
1600 +Kr. 10,236Kr. 8 188,80

*price indicative

RS Stock No.:
217-2635
Mfr. Part No.:
IRL3705NSTRLPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

89A

Maximum Drain Source Voltage Vds

55V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Maximum Drain Source Resistance Rds

10mΩ

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

98nC

Maximum Power Dissipation Pd

170W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

10.67mm

Width

4.83 mm

Height

17.79mm

Automotive Standard

No

The Infineon 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100kHz

Industry standard surface-mount power package

High-current carrying capability package (up to 195 A, die-size dependent)

Capable of being wave-soldered

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