Infineon 600V CoolMOS P6 Type N-Channel MOSFET, 23.8 A, 600 V N, 3-Pin TO-220 IPA60R160P6XKSA1
- RS Stock No.:
- 218-2999
- Mfr. Part No.:
- IPA60R160P6XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.179 84
(exc. VAT)
Kr.224 80
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 20. april 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | Kr. 35,968 | Kr. 179,84 |
| 25 - 45 | Kr. 30,224 | Kr. 151,12 |
| 50 - 120 | Kr. 28,416 | Kr. 142,08 |
| 125 - 245 | Kr. 26,244 | Kr. 131,22 |
| 250 + | Kr. 24,458 | Kr. 122,29 |
*price indicative
- RS Stock No.:
- 218-2999
- Mfr. Part No.:
- IPA60R160P6XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 23.8A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | 600V CoolMOS P6 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 176W | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.21 mm | |
| Length | 16.13mm | |
| Standards/Approvals | No | |
| Height | 21.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 23.8A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series 600V CoolMOS P6 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 176W | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 5.21 mm | ||
Length 16.13mm | ||
Standards/Approvals No | ||
Height 21.1mm | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ N-channel power MOSFET. The CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. The extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.
Increased MOSFET dv/dt ruggedness
Very high commutation ruggedness
Easy to use/drive
Pb-free plating, Halogen free mold compound
Related links
- Infineon 600V CoolMOS P6 Type N-Channel MOSFET 600 V N, 3-Pin TO-220
- Infineon CoolMOS P6 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS P6 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 IPP60R160P6XKSA1
- Infineon CoolMOS P6 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- Infineon CoolMOS P6 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 IPB60R160P6ATMA1
- Infineon CoolMOS P6 Type N-Channel MOSFET 600 V Enhancement, 5-Pin VSON
- Infineon CoolMOS P6 Type N-Channel MOSFET 600 V Enhancement, 5-Pin VSON IPL60R180P6AUMA1
- Infineon CoolMOS P6 Type N-Channel MOSFET 600 V Enhancement, 5-Pin VSON IPL60R210P6AUMA1