Infineon OptiMOS-T2 Type N-Channel MOSFET, 86 A, 40 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

Kr.9 650 00 

(exc. VAT)

Kr.12 050 00 

(inc. VAT)

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2500 +Kr. 3,86Kr. 9 650,00

*price indicative

RS Stock No.:
218-3052
Mfr. Part No.:
IPD90N04S405ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

86A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-252

Series

OptiMOS-T2

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

5.2mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

29nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

65W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

6.22 mm

Height

2.41mm

Length

6.73mm

Automotive Standard

AEC-Q101

The Infineon OptiMOS™-T2 series N-channel automotive MOSFET integrated with DPAK (TO-252) type package. It has low switching and conduction power losses.

N-channel - Enhancement mode

MSL1 up to 260°C peak reflow

175°C operating temperature

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