Infineon OptiMOS-T2 Type N-Channel MOSFET, 86 A, 40 V Enhancement, 3-Pin TO-252 IPD90N04S405ATMA1

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Subtotal (1 pack of 15 units)*

Kr.121 005 

(exc. VAT)

Kr.151 26 

(inc. VAT)

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15 - 60Kr. 8,067Kr. 121,01
75 - 135Kr. 7,665Kr. 114,98
150 - 360Kr. 7,345Kr. 110,18
375 - 735Kr. 7,024Kr. 105,36
750 +Kr. 6,536Kr. 98,04

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Packaging Options:
RS Stock No.:
218-3053
Mfr. Part No.:
IPD90N04S405ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

86A

Maximum Drain Source Voltage Vds

40V

Series

OptiMOS-T2

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

5.2mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

29nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

65W

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

2.41mm

Standards/Approvals

No

Length

6.73mm

Width

6.22 mm

Automotive Standard

AEC-Q101

The Infineon OptiMOS™-T2 series N-channel automotive MOSFET integrated with DPAK (TO-252) type package. It has low switching and conduction power losses.

N-channel - Enhancement mode

MSL1 up to 260°C peak reflow

175°C operating temperature

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