Infineon HEXFET Type N-Channel MOSFET, 31 A, 100 V Enhancement TO-252

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Subtotal (1 reel of 3000 units)*

Kr.13 575 00 

(exc. VAT)

Kr.16 968 00 

(inc. VAT)

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Units
Per unit
Per Reel*
3000 - 3000Kr. 4,525Kr. 13 575,00
6000 +Kr. 4,299Kr. 12 897,00

*price indicative

RS Stock No.:
218-3105
Mfr. Part No.:
IRFR3410TRLPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

31A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

31Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

110W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

56nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

2.39 mm

Length

6.73mm

Height

6.22mm

Automotive Standard

No

The Infineon HEXFET series single N-Channel power MOSFET integrated with DPAK (TO-252) type package. This MOSFET is mainly used in high frequency DC-DC converters.

RoHS Compliant

175°C Operating Temperature

Fast switching

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