Infineon HEXFET Type N-Channel MOSFET, 31 A, 100 V Enhancement, 3-Pin TO-252 IRFR3410TRLPBF

Subtotal (1 pack of 20 units)*

Kr.151 74 

(exc. VAT)

Kr.189 68 

(inc. VAT)

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Per unit
Per Pack*
20 +Kr. 7,587Kr. 151,74

*price indicative

Packaging Options:
RS Stock No.:
218-3106
Distrelec Article No.:
304-39-421
Mfr. Part No.:
IRFR3410TRLPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

31A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

31Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

110W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

56nC

Maximum Operating Temperature

175°C

Length

6.73mm

Height

6.22mm

Width

2.39 mm

Standards/Approvals

No

Automotive Standard

No

The Infineon HEXFET series single N-Channel power MOSFET integrated with DPAK (TO-252) type package. This MOSFET is mainly used in high frequency DC-DC converters.

RoHS Compliant

175°C Operating Temperature

Fast switching

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