Infineon HEXFET Type N-Channel MOSFET & Diode, 270 A, 40 V Enhancement, 3-Pin TO-263 AUIRF2804STRL

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Subtotal (1 pack of 2 units)*

Kr.77 98 

(exc. VAT)

Kr.97 48 

(inc. VAT)

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Per Pack*
2 +Kr. 38,99Kr. 77,98

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Packaging Options:
RS Stock No.:
220-7343
Mfr. Part No.:
AUIRF2804STRL
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET & Diode

Channel Type

Type N

Maximum Continuous Drain Current Id

270A

Maximum Drain Source Voltage Vds

40V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

160nC

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

300W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Length

10.67mm

Standards/Approvals

No

Width

9.65 mm

Height

4.83mm

Automotive Standard

AEC-Q101

The Infineon offers a wide range of 20V-40V N-channel automotive qualified power MOSFETs using the new OptiMOS technology in a variety of packages to meet a range of needs and achieving RDS(on) down to 0.6mΩ.The new OptiMOS 6 and Optimos5 40V benchmark MOSFET technology enables low conduction losses (best in Class RDSon performance), low switching losses (improved switching behaviour), improved diode recovery and EMC behaviour. This MOSFET technology is used in the most advanced and innovative packages in order to reach the best product performances and quality. For ultimate design flexibility, automotive-qualified MOSFETs are available in a variety of packages to meet a range of needs. Infineon offer customers a steady stream of improvements in current capability, switching behaviour, reliability, package size and overall quality. The newly developed integrated half-bridge is an innovative and cost efficient package solution for motor drive and body applications.

Advanced process technology

Ultra-low on-resistance

175°C operating temperature

Fast switching

Repetitive avalanche allowed up to Tjmax

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