Infineon OptiMOS 3 Type N-Channel MOSFET & Diode, 82 A, 80 V Enhancement, 8-Pin TDSON

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Subtotal (1 reel of 5000 units)*

Kr.36 350 00 

(exc. VAT)

Kr.45 450 00 

(inc. VAT)

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Units
Per unit
Per Reel*
5000 +Kr. 7,27Kr. 36 350,00

*price indicative

RS Stock No.:
220-7353
Mfr. Part No.:
BSC061N08NS5ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

82A

Maximum Drain Source Voltage Vds

80V

Series

OptiMOS 3

Package Type

TDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

6.1mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

27nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

74W

Maximum Operating Temperature

150°C

Width

6.1 mm

Height

1.2mm

Standards/Approvals

No

Length

5.35mm

Automotive Standard

No

The Infineon Infineon's OptiMOS N-channel power MOSFETs are developed to increase efficiency, power density and cost-effectiveness. Designed for high performance applications and optimized for high switching frequency, OptiMOS products convince with the industry's best figure of merit. The OptiMOS power MOSFET portfolio, now complemented by Strong IRFET, creates a truly powerful combination. Benefit from a perfect match of robust and excellent price/performance of Strong IRFET MOSFETs and best-in-class technology of OptiMOS MOSFETs. Both product families answer to the highest quality standards and performance demands. The joint portfolio, covering voltages from 12V up to 300V MOSFETs, can address a broad range of needs from low to high switching frequencies such as SMPS, battery powered applications, motor control and drives, inverters, and computing.

Optimized for high performance SMPS ,e.g. sync.rec.

100%avalanchetested

Superior thermal resistance

N-channel

QualifiedaccordingtoJEDEC1)for target applications

Pb-free lead plating; RoHS compliant

Halogen-freeaccordingtoIEC61249-2-21

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