Infineon OptiMOS 3 Type N-Channel MOSFET & Diode, 82 A, 80 V Enhancement, 8-Pin TDSON BSC061N08NS5ATMA1

RS Stock No.:: 220-7355
Mfr. Part No.:: BSC061N08NS5ATMA1
Brand:: Infineon

Infineon OptiMOS 3 Type N-Channel MOSFET & Diode, 82 A, 80 V Enhancement, 8-Pin TDSON BSC061N08NS5ATMA1

Bulk discount available

Subtotal (1 pack of 10 units)*

Kr.182 40

(exc. VAT)

Kr.228 00

(inc. VAT)

FREE delivery for online orders over 500,00 kr

In Stock

4 970 unit(s) ready to ship

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Units	Per unit	Per Pack*
10 - 40	Kr. 18,24	Kr. 182,40
50 - 90	Kr. 17,332	Kr. 173,32
100 - 240	Kr. 16,599	Kr. 165,99
250 - 490	Kr. 15,856	Kr. 158,56
500 +	Kr. 14,78	Kr. 147,80

*price indicative

RS Stock No.:: 220-7355
Mfr. Part No.:: BSC061N08NS5ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	82A
	Maximum Drain Source Voltage Vds	80V
	Series	OptiMOS 3
	Package Type	TDSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	6.1mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	27nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.1V
	Maximum Power Dissipation Pd	74W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	5.35mm
	Height	1.2mm
	Width	6.1 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 82A
	Maximum Drain Source Voltage Vds 80V
	Series OptiMOS 3
	Package Type TDSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 6.1mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 27nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.1V
	Maximum Power Dissipation Pd 74W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 5.35mm
	Height 1.2mm
	Width 6.1 mm
	Automotive Standard No

Datasheet - BSC061N08NS5ATMA1

The Infineon Infineon's OptiMOS N-channel power MOSFETs are developed to increase efficiency, power density and cost-effectiveness. Designed for high performance applications and optimized for high switching frequency, OptiMOS products convince with the industry's best figure of merit. The OptiMOS power MOSFET portfolio, now complemented by Strong IRFET, creates a truly powerful combination. Benefit from a perfect match of robust and excellent price/performance of Strong IRFET MOSFETs and best-in-class technology of OptiMOS MOSFETs. Both product families answer to the highest quality standards and performance demands. The joint portfolio, covering voltages from 12V up to 300V MOSFETs, can address a broad range of needs from low to high switching frequencies such as SMPS, battery powered applications, motor control and drives, inverters, and computing.

Optimized for high performance SMPS ,e.g. sync.rec.

100%avalanchetested

Superior thermal resistance

N-channel

QualifiedaccordingtoJEDEC1)for target applications

Pb-free lead plating; RoHS compliant

Halogen-freeaccordingtoIEC61249-2-21

Infineon OptiMOS 3 Type N-Channel MOSFET & Diode, 82 A, 80 V Enhancement, 8-Pin TDSON BSC061N08NS5ATMA1

FREE delivery for online orders over 500,00 kr

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