Infineon CoolMOS Type N-Channel MOSFET & Diode, 145 A, 700 V Enhancement, 3-Pin TO-263 IPB65R065C7ATMA2
- RS Stock No.:
- 220-7391
- Mfr. Part No.:
- IPB65R065C7ATMA2
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
Kr.149 29
(exc. VAT)
Kr.186 612
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 850 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | Kr. 74,645 | Kr. 149,29 |
| 10 - 18 | Kr. 64,235 | Kr. 128,47 |
| 20 - 48 | Kr. 59,715 | Kr. 119,43 |
| 50 - 98 | Kr. 56,115 | Kr. 112,23 |
| 100 + | Kr. 51,535 | Kr. 103,07 |
*price indicative
- RS Stock No.:
- 220-7391
- Mfr. Part No.:
- IPB65R065C7ATMA2
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 145A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-263 | |
| Series | CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 145A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-263 | ||
Series CoolMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon Cool MOS C7 super junction MOSFET series is a revolutionary step forward in technology, providing the worlds' lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.
650V voltage
Revolutionary best-in-class R DS(on)/package
Reduced energy stored in output capacitance (Eoss)
Lower gate charge Qg
Space saving through use of smaller packages or reduction of parts
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