Infineon StrongIRFET Type N-Channel MOSFET & Diode, 40 A, 40 V Enhancement, 3-Pin ISOMETRIC

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Subtotal (1 reel of 4800 units)*

Kr.39 273 60 

(exc. VAT)

Kr.49 094 40 

(inc. VAT)

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  • 4 800 unit(s) ready to ship
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Units
Per unit
Per Reel*
4800 +Kr. 8,182Kr. 39 273,60

*price indicative

RS Stock No.:
220-7473
Mfr. Part No.:
IRF6613TRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET & Diode

Channel Type

Type N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

40V

Package Type

ISOMETRIC

Series

StrongIRFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.5mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

42nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

89W

Length

6.35mm

Width

5.05 mm

Height

0.68mm

Standards/Approvals

No

Automotive Standard

No

The Infineon Strong IRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

High-current rating

Dual-side cooling capability

Low package height of 0.7mm

Low parasitic (1-2 NH) inductance package

Wide availability from distribution partners

Industry standard qualification level

High current carrying capability

Optimum thermal performance

Compact form factor

High efficiency

Environmentally friendly

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