Infineon HEXFET Type P-Channel MOSFET & Diode, 5.6 A, 20 V Enhancement, 2-Pin TO-263 IRLMS6802TRPBF

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Subtotal (1 pack of 50 units)*

Kr.194 95 

(exc. VAT)

Kr.243 70 

(inc. VAT)

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Last RS stock
  • Final 14 550 unit(s), ready to ship
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Per unit
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50 +Kr. 3,899Kr. 194,95

*price indicative

Packaging Options:
RS Stock No.:
220-7501
Mfr. Part No.:
IRLMS6802TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

5.6A

Maximum Drain Source Voltage Vds

20V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

2

Maximum Drain Source Resistance Rds

50mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

16nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

3mm

Width

1 mm

Height

3mm

Automotive Standard

No

The Infineon P-Channel MOSFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The Micro6 package with its customized lead frame produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. The unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.

Ultra Low On-Resistance

P-Channel MOSFET

Surface Mount

Available in Tape & Reel

Lead-Free

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