Infineon HEXFET Type N-Channel MOSFET, 171 A, 150 V Enhancement, 3-Pin TO-247

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Subtotal (1 tube of 25 units)*

Kr.2 415 55 

(exc. VAT)

Kr.3 019 45 

(inc. VAT)

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  • Plus 1 075 unit(s) shipping from 29. desember 2025
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Units
Per unit
Per Tube*
25 - 25Kr. 96,622Kr. 2 415,55
50 - 100Kr. 91,79Kr. 2 294,75
125 +Kr. 87,928Kr. 2 198,20

*price indicative

RS Stock No.:
222-4611
Mfr. Part No.:
AUIRFP4568
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

171A

Maximum Drain Source Voltage Vds

150V

Series

HEXFET

Package Type

TO-247

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

5.9mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

517W

Typical Gate Charge Qg @ Vgs

151nC

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

5.31mm

Length

15.87mm

Standards/Approvals

No

Width

20.7 mm

Automotive Standard

AEC-Q101

The Infineon design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

Advanced Planar Technology

Dual N Channel MOSFET Low On-Resistance

Logic Level Gate Drive

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