Infineon HEXFET Type N-Channel MOSFET, 171 A, 150 V Enhancement, 3-Pin TO-247 AUIRFP4568
- RS Stock No.:
- 222-4612
- Mfr. Part No.:
- AUIRFP4568
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
Kr.121 60
(exc. VAT)
Kr.152 00
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 1 080 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 4 | Kr. 121,60 |
| 5 - 9 | Kr. 115,43 |
| 10 - 24 | Kr. 110,51 |
| 25 - 49 | Kr. 105,82 |
| 50 + | Kr. 98,50 |
*price indicative
- RS Stock No.:
- 222-4612
- Mfr. Part No.:
- AUIRFP4568
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 171A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | HEXFET | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.9mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 151nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 517W | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.31mm | |
| Width | 20.7 mm | |
| Standards/Approvals | No | |
| Length | 15.87mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 171A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series HEXFET | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.9mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 151nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 517W | ||
Maximum Operating Temperature 175°C | ||
Height 5.31mm | ||
Width 20.7 mm | ||
Standards/Approvals No | ||
Length 15.87mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
Advanced Planar Technology
Dual N Channel MOSFET Low On-Resistance
Logic Level Gate Drive
Related links
- Infineon HEXFET Silicon N-Channel MOSFET 150 V, 3-Pin TO-247AC AUIRFP4568
- Infineon HEXFET N-Channel MOSFET 150 V Long Lead TO-247AC AUIRFP4568-E
- Infineon HEXFET N-Channel MOSFET 150 V, 3-Pin TO-247AC IRFP4568PBF
- Infineon HEXFET Silicon N-Channel MOSFET 150 V, 7-Pin D2PAK IRFS4115TRL7PP
- Infineon HEXFET Silicon N-Channel MOSFET 150 V, 3-Pin TO-220 IRFB4615PBF
- Infineon HEXFET Silicon N-Channel MOSFET 150 V, 3-Pin TO-220AB IRFB52N15DPBF
- Infineon HEXFET Dual Silicon N-Channel MOSFET 150 V, 8-Pin SO-8 IRF7451TRPBF
- Infineon HEXFET Dual Silicon N-Channel MOSFET 150 V, 8-Pin SO-8 IRF7465TRPBF