Infineon CoolMOS Type N-Channel MOSFET, 9 A, 650 V Enhancement, 3-Pin TO-252 IPD60R280CFD7ATMA1

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Subtotal (1 pack of 10 units)*

Kr.135 04 

(exc. VAT)

Kr.168 80 

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 40Kr. 13,504Kr. 135,04
50 - 90Kr. 12,824Kr. 128,24
100 - 240Kr. 12,287Kr. 122,87
250 - 490Kr. 11,749Kr. 117,49
500 +Kr. 10,948Kr. 109,48

*price indicative

Packaging Options:
RS Stock No.:
222-4671
Mfr. Part No.:
IPD60R280CFD7ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

280mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

51W

Typical Gate Charge Qg @ Vgs

18nC

Forward Voltage Vf

1V

Length

6.73mm

Height

2.41mm

Standards/Approvals

No

Width

6.22 mm

Automotive Standard

No

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

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