Infineon HEXFET Type N-Channel MOSFET, 30 A, 80 V Enhancement, 4-Pin PQFN IRFH8311TRPBF

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 15 units)*

Kr.156 945 

(exc. VAT)

Kr.196 185 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 1 425 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
15 - 60Kr. 10,463Kr. 156,95
75 - 135Kr. 9,953Kr. 149,30
150 - 360Kr. 9,724Kr. 145,86
375 - 735Kr. 9,106Kr. 136,59
750 +Kr. 8,473Kr. 127,10

*price indicative

Packaging Options:
RS Stock No.:
222-4747
Mfr. Part No.:
IRFH8311TRPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

80V

Series

HEXFET

Package Type

PQFN

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

2.1mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

30nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

96W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

5mm

Height

1.17mm

Width

6.15 mm

Automotive Standard

No

The Infineon design of HEXFET® Power MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Low RDSon (<1.15 mΩ)

Low Thermal Resistance to PCB (<0.8°C/W)

100% Rg tested

Low Profile (<0.9 mm)

Related links