Infineon HEXFET Type N-Channel MOSFET, 100 A, 25 V Enhancement, 4-Pin PQFN IRFH5250TRPBF

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Subtotal (1 pack of 10 units)*

Kr.155 54 

(exc. VAT)

Kr.194 42 

(inc. VAT)

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Per Pack*
10 - 40Kr. 15,554Kr. 155,54
50 - 90Kr. 14,758Kr. 147,58
100 - 240Kr. 14,151Kr. 141,51
250 - 490Kr. 13,534Kr. 135,34
500 +Kr. 12,618Kr. 126,18

*price indicative

Packaging Options:
RS Stock No.:
222-4745
Mfr. Part No.:
IRFH5250TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

25V

Series

HEXFET

Package Type

PQFN

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

1.15mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

52nC

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

3.6W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

6mm

Height

0.9mm

Width

4.75 mm

Automotive Standard

No

The Infineon design of HEXFET® Power MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Low RDSon (<1.15 mΩ)

Low Thermal Resistance to PCB (<0.8°C/W)

100% Rg tested

Low Profile (<0.9 mm)

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