Infineon HEXFET N-Channel MOSFET, 56 A, 55 V Enhancement, 3-Pin TO-252 IRFR2405TRPBF
- RS Stock No.:
- 222-4751
- Mfr. Part No.:
- IRFR2405TRPBF
- Brand:
- Infineon
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Kr. 228,69
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Kr. 285,87
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- 90 unit(s) shipping from 18 November 2026
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Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 15 - 60 | Kr. 15,246 | Kr. 228,69 | - |
| 75 - 135 | Kr. 14,475 | Kr. 217,13 | Kr. 57,83 |
| 150 - 360 | Kr. 13,865 | Kr. 207,98 | Kr. 207,15 |
| 375 - 735 | Kr. 13,263 | Kr. 198,95 | Kr. 743,63 |
| 750 + | Kr. 12,347 | Kr. 185,21 | Kr. 2 174,25 |
*price indicative
- RS Stock No.:
- 222-4751
- Mfr. Part No.:
- IRFR2405TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 56A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 160kΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 110W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Width | 2.39mm | |
| Standards/Approvals | No | |
| Height | 6.22mm | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 56A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 160kΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 110W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Width 2.39mm | ||
Standards/Approvals No | ||
Height 6.22mm | ||
Length 6.73mm | ||
Automotive Standard No | ||
The Infineon design of HEXFET® Power MOSFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
Related links
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252 IRFR2405TRPBF
- Infineon HEXFET N-Channel MOSFET 55 V TO-252 IRFR2405TRLPBF
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252