Infineon HEXFET Type N-Channel MOSFET, 56 A, 55 V TO-252 IRFR2405TRLPBF

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Subtotal (1 pack of 5 units)*

Kr.53 02 

(exc. VAT)

Kr.66 275 

(inc. VAT)

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  • 1 960 unit(s) ready to ship
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Units
Per unit
Per Pack*
5 - 45Kr. 10,604Kr. 53,02
50 - 120Kr. 9,746Kr. 48,73
125 - 245Kr. 9,106Kr. 45,53
250 - 495Kr. 8,466Kr. 42,33
500 +Kr. 7,848Kr. 39,24

*price indicative

Packaging Options:
RS Stock No.:
258-3984
Mfr. Part No.:
IRFR2405TRLPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

56A

Maximum Drain Source Voltage Vds

55V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Maximum Drain Source Resistance Rds

16mΩ

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

110W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

70nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon R MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Increased ruggedness

Wide availability from distribution partners

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