Infineon HEXFET Type N-Channel MOSFET, 56 A, 100 V, 3-Pin TO-252

Subtotal (1 reel of 3000 units)*

Kr.25 392 00 

(exc. VAT)

Kr.31 740 00 

(inc. VAT)

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3000 +Kr. 8,464Kr. 25 392,00

*price indicative

RS Stock No.:
214-4456
Mfr. Part No.:
IRFR3710ZTRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

56A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

18mΩ

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

140W

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

100nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .

Its design is extremely efficient and reliable

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