Infineon HEXFET Type N-Channel MOSFET, 56 A, 100 V TO-252

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Subtotal (1 reel of 2000 units)*

Kr.13 000 00 

(exc. VAT)

Kr.16 240 00 

(inc. VAT)

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Per Reel*
2000 +Kr. 6,50Kr. 13 000,00

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RS Stock No.:
257-5544
Mfr. Part No.:
IRFR3710ZTRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

56A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Maximum Drain Source Resistance Rds

18mΩ

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

140W

Typical Gate Charge Qg @ Vgs

69nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Length

6.73mm

Standards/Approvals

RoHS

Height

10.41mm

Width

2.39 mm

Automotive Standard

No

The Infineon HEXFET power MOSFET is utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Advanced process technology

Ultra low on-resistance

175°C operating temperature

Fast switching

Repetitive avalanche allowed up to Tjmax

Multiple package options

Lead-free

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