Infineon HEXFET Type N-Channel MOSFET, 56 A, 100 V TO-252 IRFR3710ZTRPBF
- RS Stock No.:
- 257-5855
- Distrelec Article No.:
- 304-40-539
- Mfr. Part No.:
- IRFR3710ZTRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr. 109,14
(exc. VAT)
Kr. 136,425
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 2 425 unit(s) shipping from 02 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | Kr. 21,828 | Kr. 109,14 |
| 25 - 45 | Kr. 19,654 | Kr. 98,27 |
| 50 - 120 | Kr. 18,304 | Kr. 91,52 |
| 125 - 245 | Kr. 17,022 | Kr. 85,11 |
| 250 + | Kr. 8,74 | Kr. 43,70 |
*price indicative
- RS Stock No.:
- 257-5855
- Distrelec Article No.:
- 304-40-539
- Mfr. Part No.:
- IRFR3710ZTRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 56A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Maximum Power Dissipation Pd | 140W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 69nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Width | 2.39 mm | |
| Standards/Approvals | RoHS | |
| Length | 6.73mm | |
| Height | 10.41mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 56A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Maximum Power Dissipation Pd 140W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 69nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Width 2.39 mm | ||
Standards/Approvals RoHS | ||
Length 6.73mm | ||
Height 10.41mm | ||
Automotive Standard No | ||
The Infineon HEXFET power MOSFET is utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Advanced process technology
Ultra low on-resistance
175°C operating temperature
Fast switching
Repetitive avalanche allowed up to Tjmax
Multiple package options
Lead-free
Related links
- Infineon HEXFET Type N-Channel MOSFET 100 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 55 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 55 V TO-252 IRFR2405TRLPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 100 V, 3-Pin TO-252 IRFR3710ZTRLPBF
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252 IRFR2405TRPBF
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220