Infineon HEXFET Type N-Channel MOSFET, 56 A, 100 V TO-252 IRFR3710ZTRPBF

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Kr.121 01 

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Kr.151 26 

(inc. VAT)

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5 - 20Kr. 24,202Kr. 121,01
25 - 45Kr. 21,804Kr. 109,02
50 - 120Kr. 20,318Kr. 101,59
125 - 245Kr. 18,854Kr. 94,27
250 +Kr. 9,678Kr. 48,39

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Packaging Options:
RS Stock No.:
257-5855
Mfr. Part No.:
IRFR3710ZTRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

56A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Maximum Drain Source Resistance Rds

18mΩ

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

69nC

Maximum Power Dissipation Pd

140W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Width

2.39 mm

Height

10.41mm

Length

6.73mm

Standards/Approvals

RoHS

Automotive Standard

No

Distrelec Product Id

304-40-539

The Infineon HEXFET power MOSFET is utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Advanced process technology

Ultra low on-resistance

175°C operating temperature

Fast switching

Repetitive avalanche allowed up to Tjmax

Multiple package options

Lead-free

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