Infineon IPD50R Type N-Channel MOSFET, 40 A, 600 V Enhancement, 5-Pin ThinPAK

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Subtotal (1 reel of 3000 units)*

Kr.108 255 00 

(exc. VAT)

Kr.135 318 00 

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +Kr. 36,085Kr. 108 255,00

*price indicative

RS Stock No.:
222-4906
Mfr. Part No.:
IPL60R060CFD7AUMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

600V

Series

IPD50R

Package Type

ThinPAK

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

60mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

79nC

Maximum Power Dissipation Pd

219W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

8.1mm

Height

1.1mm

Width

8.1 mm

Automotive Standard

No

The Infineon 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behaviour and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.

Best-in-class hard commutation ruggedness

Highest reliability for resonant topologies

Highest efficiency with outstanding ease-of-use/performance trade-off

Enabling increased power density solutions

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