Infineon IPD50R Type N-Channel MOSFET, 40 A, 600 V Enhancement, 5-Pin ThinPAK IPL60R060CFD7AUMA1

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Subtotal (1 pack of 2 units)*

Kr.154 01 

(exc. VAT)

Kr.192 512 

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8Kr. 77,005Kr. 154,01
10 - 18Kr. 68,525Kr. 137,05
20 - 48Kr. 64,75Kr. 129,50
50 - 98Kr. 60,115Kr. 120,23
100 +Kr. 55,425Kr. 110,85

*price indicative

Packaging Options:
RS Stock No.:
222-4907
Mfr. Part No.:
IPL60R060CFD7AUMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

600V

Package Type

ThinPAK

Series

IPD50R

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

60mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

79nC

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

219W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

8.1 mm

Height

1.1mm

Length

8.1mm

Automotive Standard

No

The Infineon 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behaviour and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.

Best-in-class hard commutation ruggedness

Highest reliability for resonant topologies

Highest efficiency with outstanding ease-of-use/performance trade-off

Enabling increased power density solutions

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