Infineon IPD50R Type N-Channel MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-252 IPD50R800CEAUMA1

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 25 units)*

Kr.269 35 

(exc. VAT)

Kr.336 70 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 7 400 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
25 - 100Kr. 10,774Kr. 269,35
125 - 225Kr. 8,296Kr. 207,40
250 - 600Kr. 7,756Kr. 193,90
625 - 1225Kr. 7,216Kr. 180,40
1250 +Kr. 6,681Kr. 167,03

*price indicative

Packaging Options:
RS Stock No.:
222-4900
Mfr. Part No.:
IPD50R800CEAUMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

5A

Maximum Drain Source Voltage Vds

500V

Series

IPD50R

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

800mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

40W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.83V

Typical Gate Charge Qg @ Vgs

12.4nC

Maximum Operating Temperature

150°C

Length

6.73mm

Height

2.41mm

Width

6.22 mm

Standards/Approvals

No

Automotive Standard

No

The Infineon 500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.

Reduced energy stored in output capacitance (E oss)

High body diode ruggedness

Reduced reverse recovery charge (Q rr )

Reduced gate charge (Q g )

Related links