Infineon IPD50R Type N-Channel MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

Kr.6 177 50 

(exc. VAT)

Kr.7 722 50 

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +Kr. 2,471Kr. 6 177,50

*price indicative

RS Stock No.:
222-4899
Mfr. Part No.:
IPD50R800CEAUMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

5A

Maximum Drain Source Voltage Vds

500V

Series

IPD50R

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

800mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

12.4nC

Maximum Power Dissipation Pd

40W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.83V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.73mm

Width

6.22 mm

Height

2.41mm

Automotive Standard

No

The Infineon 500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.

Reduced energy stored in output capacitance (E oss)

High body diode ruggedness

Reduced reverse recovery charge (Q rr )

Reduced gate charge (Q g )

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