Infineon IPDQ60R010S7 Type N-Channel MOSFET, 50 A, 600 V N, 22-Pin HDSOP

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Subtotal (1 reel of 750 units)*

Kr.104 564 25 

(exc. VAT)

Kr.130 705 50 

(inc. VAT)

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Units
Per unit
Per Reel*
750 +Kr. 139,419Kr. 104 564,25

*price indicative

RS Stock No.:
225-0579
Mfr. Part No.:
IPDQ60R010S7XTMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

600V

Package Type

HDSOP

Series

IPDQ60R010S7

Mount Type

Surface

Pin Count

22

Maximum Drain Source Resistance Rds

10mΩ

Channel Mode

N

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

318nC

Forward Voltage Vf

0.82V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

694W

Maximum Operating Temperature

150°C

Height

21.06mm

Width

2.35 mm

Length

15.1mm

Standards/Approvals

No

Automotive Standard

No

The Infineon IPDQ60R010S7 is the N channel power MOSFET and it enables the best performance for low frequency switching applications. The MOSFET is optimized for static switching and high current applications. It is an ideal fit for solid state relay and circuit breaker designs as well as for liner rectification inSMPS and inverter topologies.

Minimizes conduction losses

Increases energy efficiency

More compact and easier designs

Eliminates or reduces heat sinks in solid-state design

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