Vishay E Type N-Channel MOSFET, 4.4 A, 800 V, 3-Pin TO-263 SIHB5N80AE-GE3
- RS Stock No.:
- 225-9912
- Mfr. Part No.:
- SIHB5N80AE-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr.183 84
(exc. VAT)
Kr.229 80
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Last RS stock
- Final 960 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | Kr. 18,384 | Kr. 183,84 |
| 100 - 240 | Kr. 17,663 | Kr. 176,63 |
| 250 - 490 | Kr. 15,627 | Kr. 156,27 |
| 500 - 990 | Kr. 14,735 | Kr. 147,35 |
| 1000 + | Kr. 13,785 | Kr. 137,85 |
*price indicative
- RS Stock No.:
- 225-9912
- Mfr. Part No.:
- SIHB5N80AE-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.4A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-263 | |
| Series | E | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.3Ω | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 62.5W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 16.5nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 9.65 mm | |
| Length | 10.67mm | |
| Height | 15.88mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.4A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-263 | ||
Series E | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.3Ω | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 62.5W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 16.5nC | ||
Maximum Operating Temperature 150°C | ||
Width 9.65 mm | ||
Length 10.67mm | ||
Height 15.88mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Ciss)
Reduced switching and conduction losses
Ultra low gate charge (Qg)
Avalanche energy rated (UIS)
Integrated Zener diode ESD protection
Related links
- Vishay E-Series N-Channel MOSFET 800 V, 3-Pin D2PAK SIHB5N80AE-GE3
- Vishay E-Series N-Channel MOSFET 800 V, 3-Pin TO-220AB SIHP5N80AE-GE3
- Vishay E Series N-Channel MOSFET 850 V, 3-Pin DPAK SiHD5N80AE-GE3
- Vishay E-Series N-Channel MOSFET 600 V, 3-Pin D2PAK SIHB053N60E-GE3
- Vishay E Series N-Channel MOSFET 600 V, 3-Pin D2PAK SIHB30N60E-GE3
- Vishay E Series Dual N-Channel MOSFET 800 V, 3-Pin D2PAK SIHB24N80AE-GE3
- Vishay E Series Dual N-Channel MOSFET 650 V, 3-Pin D2PAK SIHB120N60E-T5-GE3
- Vishay E Series Dual N-Channel MOSFET 650 V, 3-Pin D2PAK SIHB120N60E-T1-GE3