Vishay TrenchFET Type N-Channel MOSFET, 8.3 A, 100 V Enhancement, 8-Pin SO-8 Si4056ADY-T1-GE3

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Subtotal (1 pack of 10 units)*

Kr.82 14 

(exc. VAT)

Kr.102 68 

(inc. VAT)

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Being discontinued
  • Final 4 820 unit(s), ready to ship
Units
Per unit
Per Pack*
10 - 90Kr. 8,214Kr. 82,14
100 - 240Kr. 7,39Kr. 73,90
250 - 490Kr. 6,063Kr. 60,63
500 - 990Kr. 5,342Kr. 53,42
1000 +Kr. 4,118Kr. 41,18

*price indicative

Packaging Options:
RS Stock No.:
228-2819
Mfr. Part No.:
Si4056ADY-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8.3A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

29.2mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

5W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

19.2nC

Maximum Operating Temperature

150°C

Height

1.75mm

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET Gen IV N-Channel power MOSFET is use for load switch, circuit protection and motor drive control.

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

Logic level gate drive

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