Vishay E Type N-Channel MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-220 SiHP080N60E-GE3

Bulk discount available

Subtotal (1 pack of 2 units)*

Kr. 122,75

(exc. VAT)

Kr. 153,438

(inc. VAT)

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  • 698 unit(s) ready to ship
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Units
Per unit
Per Pack*
2 - 18Kr. 61,375Kr. 122,75
20 - 48Kr. 55,255Kr. 110,51
50 - 98Kr. 52,225Kr. 104,45
100 - 198Kr. 49,08Kr. 98,16
200 +Kr. 45,415Kr. 90,83

*price indicative

Packaging Options:
RS Stock No.:
228-2875
Mfr. Part No.:
SiHP080N60E-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-220

Series

E

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

227W

Typical Gate Charge Qg @ Vgs

42nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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