Vishay E Type N-Channel MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-247 SiHG080N60E-GE3

Bulk discount available

Subtotal (1 pack of 2 units)*

Kr.118 29 

(exc. VAT)

Kr.147 862 

(inc. VAT)

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Last RS stock
  • Final 438 unit(s), ready to ship
Units
Per unit
Per Pack*
2 - 18Kr. 59,145Kr. 118,29
20 - 48Kr. 53,255Kr. 106,51
50 - 98Kr. 47,305Kr. 94,61
100 - 198Kr. 43,185Kr. 86,37
200 +Kr. 37,295Kr. 74,59

*price indicative

Packaging Options:
RS Stock No.:
228-2864
Mfr. Part No.:
SiHG080N60E-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

650V

Series

E

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

42nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

227W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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