Vishay TrenchFET N-Channel MOSFET, 201 A, 25 V Enhancement, 4-Pin SO-8 SiJA22DP-T1-GE3

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Subtotal (1 pack of 5 units)*

Kr. 84,88

(exc. VAT)

Kr. 106,10

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45Kr. 16,976Kr. 84,88
50 - 120Kr. 15,26Kr. 76,30
125 - 245Kr. 13,568Kr. 67,84
250 - 495Kr. 12,744Kr. 63,72
500 +Kr. 11,852Kr. 59,26

*price indicative

Packaging Options:
RS Stock No.:
228-2890
Mfr. Part No.:
SiJA22DP-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

201A

Maximum Drain Source Voltage Vds

25V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.74mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

48W

Typical Gate Charge Qg @ Vgs

83nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 25 V MOSFET.

100 % Rg and UIS tested

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